New Product
Si4435DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
0.06
0.05
I D = 9.1 A
1
T J = 150 °C
T J = 25 °C
0.04
T J = 125 °C
0.03
0.1
0.02
0.01
0.001
T J = - 50 °C
0.01
0
T J = 25 °C
0.0
0.2
0.4
0.6
0. 8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
0.6
V SD - So u rce-to-Drain V oltage ( V )
Source-Drain Diode Forward Voltage
100
V GS - Gate-to-So u rce V oltage ( V )
On-Resistance vs. Gate-to-Source Voltage
8 0
0.4
I D = 250 μ A
60
0.2
I D = 1 mA
40
0.0
20
- 0.2
0
- 50
- 25
0
25
50
75
100
125
150
0 . 0 0 1
0.01
0.1
1
1 0
T J - Temperat u re (°C)
Threshold Voltage
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited b y R DS(on) *
100 μs
10
1 ms
1
10 ms
100 ms
1s
0.1
T A = 25 °C
Single P u lse
10 s
100 s, DC
BVDSS Limited
0.01
0.1
1
10
100
V DS - Drain-to-So u rce V oltage ( V )
* V GS > minim u m V GS at w hich R DS(on) is specified
Safe Operating Area
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4
Document Number: 68841
S09-0863-Rev. C, 18-May-09
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